eth

Semester Project at the Electronics Laboratory

Simulation of Non-Stationary Transport Mechanisms in Semiconductors

6 February 1998

Abstract

Most of the models used for describing semiconductors are based on the drift-diffusion-transport model, i.e. they assume thermodynamic equilibrium. Considering speed and dimensions of nowadays semiconductor devices, it is not clear anymore, how well this assumption is fulfilled. Fortunately, there exists a different formulation of the problem: The so-called Monte-Carlo Method is based on a statistical simulation of many particles and avoids the need of directly solving Boltzmann's transport equation. This semesterwork is part of a project with the goal to implement a simulator based on Monte-Carlo using a structure that reflects the physics and is in a high degree extensible. Therefore, the program is written in an object oriented way in C++.

This work focuses on the lowest level of the simulator: the drifting process and the different scattering mechanisms (as impurity scattering, lattice vibrations or particle-particle scattering). The ``self scattering process'' that has been introduced by Rees and that keeps the total scattering rate constant over a time of drifting has been used and also extended. This report contains every mathematical derivation and explains the structure of the program in detail. One chapter describes the interface in order to make it easy for any user to work with the classes and functions. The complete C++-code has been appended.

Download of the Report

The written report can be downloaded here.

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-||-   _|_ _|_     /    __|__   Stefan M. Moser
[-]     --__|__   /__\    /__   Senior Researcher & Lecturer, ETH Zurich, Switzerland
_|_     -- --|-    _     /  /   Adj. Professor, National Chiao Tung University (NCTU), Taiwan
/ \     []  \|    |_|   / \/    Web: http://moser-isi.ethz.ch/


Last modified: Wed Feb 18 08:01:02 UTC+8 2009